●Mitsubishi Electric Corporation has released 10Gbps DWDM CAN type EML-TOSA for mobile communication system base station. (from Mitsubishi Electric Corporation News Release)

January 20, 2016
http://www.mitsubishielectric.co.jp/news/2016/0120-b.html

 

●Samsung mass-produces TSV-connected4G byte DRAM package of HBM2 specification. (Samsung News Release)

January 19, 2016
http://www.samsung.com/semiconductor/about-us/news/24587

 

●National Institute of Advanced Industrial Science and Technology has developed a high sensitivity terahertz wave power sensor. (from National Institute of Advanced Industrial Science and Technology)

January 18, 2016
http://www.aist.go.jp/aist_j/press_release/pr2016/pr20160118/pr20160118.html

 

●SHINDENGEN ELECTRIC MANUFACTURING CO.LTD has reduced by half the volume of the buck-type DC/DC converter for hybrid cars, which will be mass-produced in February 2016. (from monoist)

January 15, 2016
http://monoist.atmarkit.co.jp/mn/articles/1601/15/news042.html

 

●Linear has released a 500mA output LDO regulator IC capable of 45V input. (from Linear News Release)

January 13, 2016
http://www.linear-tech.jp/images/news/pressroom/PDF/LT3066_160113.pdf
http://techon.nikkeibp.co.jp/atcl/news/15yk/011300166/?ST=lsi

 

●TEKTRONIX has announced the release of a source meter (SMU)capable of monitoring the performance and response and evaluating the characteristics of the devices of maximum 10A and 1000W.(from TEKTRONIX Press Release)

January 13, 2016
http://www.keithley.jp/news/prod011416

 

●Qualtec has released a power semiconductor reliability test device capable of testing simultaneously maximum 12. (from Nikkan Kogyo Shimbun)

January 12, 2016
https://www.nikkan.co.jp/articles/view/00370543?isReadConfirmed=true

 

●Cypress has productized a 40nm microcomputer for automobile use. (from EE Times Japan)

January 12, 2016
http://eetimes.jp/ee/articles/1601/13/news036.html

 

●Murata Manufacturing Company, Ltd. has commoditized an automobile grade laminated ceramic condenser GRT series. (from Murata Manufacturing Company Press Release)

January 12, 2016
http://www.murata.com/ja-jp/about/newsroom/news/product/capacitor/2016/0112

 

●Microchip Technology has developed a framework capable of reducing the development period by more than 20%. (from EDN Japan)

January 12, 2016
http://ednjapan.com/edn/articles/1601/07/news025.html

 

●Kyocera Corporation has developed a substrate material composed of silicon carbide (SiC) suitable for releasing the heat of power semiconductors and begun its partial mass-production. (from Nikkan Kogyo Shimbun)

January 6, 2016
https://www.nikkan.co.jp/articles/view/00370010?isReadConfirmed=true

 

●Enevate has developed a lithium ion battery with Si negative electrode. (from Tech-on)

January 6, 2016
http://techon.nikkeibp.co.jp/atcl/event/15/121400021/010600011/?ST=lsi&d=1453354557988

 

●Renesas and TTTech will collaborate with each other for the development platform of ECU for automatic operating system of vehicles. (from Renesas News Release)

January 6, 2016
http://japan.renesas.com/press/news/2016/news20160106.jsp

 

●Fuji Electric has released high-speed discrete IGBT “High-Speed W” Series as a new power semiconductor product.(from Fuji Electric News Release)

January 5, 2016
http://monoist.atmarkit.co.jp/mn/articles/1601/05/news030.html
http://www.fujielectric.co.jp/about/news/detail/2015/20151216090016810.html

 

●The situation with the power semiconductor industry of this year is that there have been a number of successive acquisitions and collaborations and the permeation of SiC and GaN. (from Tech on)

December 28, 2015
http://techon.nikkeibp.co.jp/atcl/feature/15/120900013/121700004/?ST=lsi

 

●Ube Industries has deployed the business of silicon nitride through its downstream companies and developed a fluorescence substance for white color LED. (from The Chemical Daily)

December 21, 2015
http://www.kagakukogyonippo.com/headline/2015/12/21-22990.html

 

●Hitachi High-Technologies Corporation has succeeded in improving the productivity of CD-SEM corresponding to 200mm wafers. (from EE Times Japan)

December 18, 2015
http://eetimes.jp/ee/articles/1512/18/news060.html

 

●Fuji Electric has released a new series of high-speed discrete IGBT as a new power semiconductor product.(from Fuji Electric News Release)

December 16, 2015
http://monoist.atmarkit.co.jp/mn/articles/1601/05/news030.html
http://www.fujielectric.co.jp/about/news/detail/2015/20151216090016810.html